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PSP analysis for calculating capacitance looking into the drain of the nfet_rf

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Hello All,

I am trying to calculate the value of the capacitance looking into the drain of the transistor using Y11 parameters( imaginary part).  The problem I am getting is "  I get a resonant peak" .  I do not understand why? Can anyone help me with the explanation?  The circuit that I am using is a nfet_rf transistor with 870um width with an inductor of 10nH at the drain with Vdd=1.5V and at the gate Vpulse from 0 to 1.5V at 2.4Ghz.

Thank you in advance. 


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